Tag Archives: Power Device Characterization

Expanding Device Characterization Performance and Productivity

Our Infinity Probe® sets a standard of performance by ensuring better measurements on aluminum pads, reducing reprobing and errors in measured data. We believe it’s a key component of an int… [View More]

Achieving Accurate, Wafer-Level Power Device Characterization

Until recently, power device manufacturers have been saddled with the task of sending power devices out for packaging prior to characterization and model extraction. This extra step adds cost, plus de… [View More]

Join Us at SEMICON Korea February 7th through the 9th

As SEMICON’s recent press release says best… “With forecasts projecting Korea to lead the world in semiconductor equipment capital spending this year, industry leaders will be looki… [View More]

Highly Accurate Characterization of RF Power Devices at Wafer Level

The proliferation of smartphone technology is creating a demand for wireless access to content from anywhere in the world. This, in turn, creates the need for RF power devices in new technologies such… [View More]

On-Wafer Calibration for Accurate mm-Wave Device Characterization

As device dimensions decrease and the operation frequencies are pushed toward the THz range it is becoming essential to improve conventional wafer-level mm-wave device characterization methods. Accura… [View More]

Overcoming On-Wafer Power Device Characterization Challenges

The power device industry is always striving to develop the “ideal switch” – a device that blocks high voltages in the off state, exhibits zero resistance in the on state, and has un… [View More]